发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
<p>Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a semiconductor substrate which includes an active region defined by a device isolation layer, a word line which crosses the active region and is extended in a first direction on the semiconductor substrate, source and drain impurity regions which are formed in the active region at both sides of the word line, lines which are extended in a second direction vertical to the first direction on the word line, a contact pad which extends in the first direction and is provided betweeen the word lines and the lines, a lower contact plus which electrically connects the contact pad and one of the source and drain impurity regions, and an upper contact plug which electrically connects the contact pad and one of the lines.</p> |
申请公布号 |
KR20150026054(A) |
申请公布日期 |
2015.03.11 |
申请号 |
KR20130104375 |
申请日期 |
2013.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JONG KOOK;KIM, HONG SOO;JANG, WON CHUL |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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