Selector device using low leakage dielectric MIMCAP diode

摘要

MIMCAP diodes are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP diodes can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a barrier height modification layer, a low leakage dielectric layer and a high leakage dielectric layer. The layers can be sandwiched between two electrodes.

主权项

1. A device comprising
a first layer, wherein the first layer is operable as a first electrode,
wherein the first electrode is an inert electrode made from one of doped poly-Si, Ru, ruthenium oxide, Ir, Cu, Ag, W, TiN, TaN, Pt, Au, and IrO2; a second layer disposed above the first layer,
wherein the second layer comprises HfOx, andwherein the second layer has a first band gap and a first leakage currentwherein the first layer includes an oxide sub-layer facing the second layer; a third layer disposed above the first layer,
wherein the third layer comprises doped HfOx,wherein the third layer has a second band gap and a second leakage current,wherein the first band gap is different than the second band gap, and; a fourth layer disposed above the third layer,
wherein the fourth layer comprises HfOx,wherein the fourth layer has a third band gap and a third leakage current,wherein the third leakage current is higher than the second leakage current and higher than the first leakage current; and a fifth layer disposed above the first layer, wherein the fifth layer is operable as a second electrode;
wherein each of the second layer, the third layer, and the fourth layer is operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity,wherein the second polarity is opposite of the first polarity.