Substrate for epitaxial growth

摘要

A surface of a substrate consists of a plurality of neighboring stripes. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). The disorientation angle of each of the flat surfaces is between 0 and 3 degrees and is different for each pair of neighboring flat surfaces. The substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by a MOCVD or MBE method which allow to obtain a non-absorbing mirrors laser diode emitting a light in the wavelength from 380 to 550 nm.

主权项

1. A substrate for epitaxial growth made of gallium nitride crystal, and having epi-ready growth surface, wherein the growth surface consists of a set of neighboring flat surfaces in a form of stripes of a width from 1 to 2000 μm, wherein longer edges of the stripes are parallel one to another, wherein planes of the stripes are disoriented relatively to the crystallographic plane defined by Miller-Bravais indices (0001), (10-10), (11-22) or (11-20) and wherein a disorientation angle of each of the flat surfaces is from 0 to 3 degrees and wherein the disorientation angle is different for each of two neighboring surfaces.