Flexible base material and flexible electronic device

摘要

The invention provides a flexible base material and a flexible electronic device. The flexible base material includes a flexible substrate having a first surface and a second surface opposite to the first surface. A first organic composite barrier layer is deposited on the first surface of the flexible substrate, wherein the first organic composite barrier layer applies a first stress to the flexible substrate. An anti-curved layer is deposited on the second surface of the flexible substrate, wherein the anti-curved layer applies a second stress to the flexible substrate, and wherein the second stress applied by the anti-curved layer cancels off more than 90% of the first stress.

主权项

1. A flexible base material, comprising:
a flexible substrate having a first surface and a second surface opposite to the first surface; a first organic composite barrier layer deposited on the first surface of the flexible substrate, wherein the first organic composite barrier layer applies a first stress to the flexible substrate; and an anti-curved layer deposited on the second surface of the flexible substrate, wherein the anti-curved layer applies a second stress to the flexible substrate, and wherein the second stress applied by the anti-curved layer cancels off more than 90% of the first stress, wherein the first organic composite barrier layer comprises an organic material containing Si-(CH3)x bond or Si-(CH2)x bond, and wherein the anti-curved layer comprises silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiOxNy), and wherein the first organic composite barrier layer comprises a first organic layer and a second organic layer, and the first organic layer is deposited between the flexible substrate and the second organic layer, wherein the first organic layer comprises an Si-O-Si bond and a ratio of the Si-O-Si bond to a Si-(CH3)x bond is smaller than 1 or equal to 1, and wherein the second organic layer comprises an Si-O-Si bond and a ratio of the Si-O-Si bond to a Si-(CH3)x bond is larger than 1.