发明名称 Method of manufacturing light-emitting device with fluorescent layer
摘要 A method of manufacturing a light-emitting device includes disposing a light-emitting element on a supporting member, dispersing a fluorescent substance having a particle diameter of 20 to 45 μm in a material of the light-transmitting member at a concentration of 40 to 60 wt %, dripping raw material for the fluorescent layer on the light-emitting element while lowering the viscosity of the raw material, and thermally curing the coated layer.
申请公布号 US8974852(B2) 申请公布日期 2015.03.10
申请号 US201113053922 申请日期 2011.03.22
申请人 Kabushiki Kaisha Toshiba 发明人 Kaneko Kei;Shida Naomi;Yamamoto Masahiro;Hattori Yasushi
分类号 H01L33/50;C09K11/77;H05B33/10;H05B33/14;H01L33/20 主分类号 H01L33/50
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method of manufacturing a light-emitting device comprising: disposing an LED chip on a supporting member; dispersing a fluorescent substance having a particle diameter ranging from 20 to 45 μM in a material of a light-transmitting member at a concentration of 40 to 60 wt % to obtain a raw material for a fluorescent layer; dripping the raw material for the fluorescent layer on the LED chip while lowering the viscosity of the raw material, thereby forming a coated layer; and thermally curing the coated layer to form the fluorescent layer having a thickness ranging from 80 to 240 μm, wherein a surface of the fluorescent layer is in contact with an external atmosphere and has recesses and projections that correspond to an arrangement of the particles of the fluorescent substance.
地址 Tokyo JP