发明名称 |
Method of manufacturing light-emitting device with fluorescent layer |
摘要 |
A method of manufacturing a light-emitting device includes disposing a light-emitting element on a supporting member, dispersing a fluorescent substance having a particle diameter of 20 to 45 μm in a material of the light-transmitting member at a concentration of 40 to 60 wt %, dripping raw material for the fluorescent layer on the light-emitting element while lowering the viscosity of the raw material, and thermally curing the coated layer. |
申请公布号 |
US8974852(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US201113053922 |
申请日期 |
2011.03.22 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Kaneko Kei;Shida Naomi;Yamamoto Masahiro;Hattori Yasushi |
分类号 |
H01L33/50;C09K11/77;H05B33/10;H05B33/14;H01L33/20 |
主分类号 |
H01L33/50 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method of manufacturing a light-emitting device comprising:
disposing an LED chip on a supporting member; dispersing a fluorescent substance having a particle diameter ranging from 20 to 45 μM in a material of a light-transmitting member at a concentration of 40 to 60 wt % to obtain a raw material for a fluorescent layer; dripping the raw material for the fluorescent layer on the LED chip while lowering the viscosity of the raw material, thereby forming a coated layer; and thermally curing the coated layer to form the fluorescent layer having a thickness ranging from 80 to 240 μm, wherein a surface of the fluorescent layer is in contact with an external atmosphere and has recesses and projections that correspond to an arrangement of the particles of the fluorescent substance. |
地址 |
Tokyo JP |