| 发明名称 | Measuring apparatus, imprint system, measuring method, and device manufacturing method | ||
| 摘要 | An measuring apparatus includes: a storage unit configured to store a relationship, regarding an irradiation condition predetermined based on a correlation between a characteristic of each of beams of reflected light obtained from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; and a processing unit configured to, based on a characteristic of reflected light from a pattern formed on a substrate irradiated with light under the irradiation condition and the relationship stored in the storage unit, obtain a thickness of a residual layer in a recessed portion of the pattern formed on the substrate. | ||
| 申请公布号 | US8976370(B2) | 申请公布日期 | 2015.03.10 |
| 申请号 | US201314086132 | 申请日期 | 2013.11.21 |
| 申请人 | Canon Kabushiki Kaisha | 发明人 | Miyakawa Takahiro;Sato Kazuhiro;Minoda Ken;Ina Hideki |
| 分类号 | G01B11/28;G01B11/06 | 主分类号 | G01B11/28 |
| 代理机构 | Canon USA, Inc. IP Division | 代理人 | Canon USA, Inc. IP Division |
| 主权项 | 1. A measuring apparatus for, based on a characteristic of reflected light obtained by irradiating with light a pattern formed on a substrate, obtaining a thickness of a residual layer in a recessed portion of the pattern formed on the substrate, the measuring apparatus comprising: a storage unit configured to store a relationship, regarding an irradiation condition based on a correlation between a characteristic of each of beams of reflected light from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; and a processing unit configured to, based on a characteristic of the reflected light from the pattern formed on the substrate irradiated with light under the irradiation condition and the relationship stored in the storage unit, obtain the thickness of the residual layer in the recessed portion of the pattern formed on the substrate. | ||
| 地址 | Tokyo JP | ||