Ultra slim bezel structure of liquid crystal display device

摘要

The present invention relates to an ultra slim bezel structure of liquid crystal display device, which includes a TFT surface having an inner face on which a PI film is arranged, a CF surface having an inner face on which a PI film is arranged, a sealant, and a first color resist barrier and a second color resist barrier. The inner faces of the TFT surface and the CF surface are in registration with each other in a vertical direction and edges of the inner faces of the TFT surface and the CF surface are bonded together with the sealant. The first color resist barrier includes a linear color resist barrier that is formed by continuously arranging color resist on the inner face of the TFT surface adjacent to the sealant to extend along the edge of the TFT surface. The second color resist barrier includes a linear color resist barrier that is formed by continuously arranging color resist on the inner face of the CF surface adjacent to the sealant to extend along the edge of the CF surface. The first color resist barrier and the second color resist barrier oppose each other at upper and lower sides and respectively block spread of the PI films on the TFT surface and the CF surface. The present invention effectively controls spread areas of PI films and realizes an ultra slim bezel design to thereby effectively handle peripheral mura.

主权项

1. An ultra slim bezel structure of a liquid crystal display device, comprising a thin-film transistor (TFT) surface having an inner face on which a polyimide (PI) film is arranged, a color filter (CF) surface having an inner face on which another PI film is arranged, a sealant, and a first color resist barrier and a second color resist barrier, the inner faces of the TFT surface and the CF surface being in alignment with each other in a vertical direction and edges of the inner faces of the TFT surface and the CF surface being bonded together with the sealant, the first color resist barrier comprising a linear color resist barrier that is formed by continuously arranging color resist on the inner face of the TFT surface adjacent to the sealant to extend along the edge of the TFT surface, the second color resist barrier comprising a linear color resist barrier that is formed by continuously arranging color resist on the inner face of the CF surface adjacent to the sealant to extend along the edge of the CF surface, the first color resist barrier and the second color resist barrier opposing each other at upper and lower sides and respectively blocking spread of the PI films on the TFT surface and the CF surface;
wherein the TFT surface further comprises a third color resist barrier solely formed on the inner face of the TFT surface, the third color resist barrier comprising a dash-line like color resist barrier that is formed by intermittently arranging color resist in a direction extending along the first color resist barrier on the inner face of the TFT surface adjacent to an inner side of the first color resist barrier; wherein the CF surface further comprises a fourth color resist barrier solely formed on the inner face of the CF surface, the fourth color resist barrier comprising a dash-line like color resist barrier that is formed by intermittently arranging color resist in a direction extending along the second color resist barrier on the inner face of the CF surface adjacent to an inner side of the second color resist barrier; and wherein when the inner faces of the TFT surface and the CF surface are aligned with and bonded to each other in a vertical direction, the dashes of color resist that form the dash-line like third color resist barrier and the dashes of color resist that form the dash-line like fourth color resist barrier are respectively and alternately arranged on the TFT surface and the CF surface and alternating each other.