Method of making a semiconductor device including barrier layers for copper interconnect

摘要

A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion. The method further includes forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer. The method further includes forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer.

主权项

1. A method of making a semiconductor device, the method comprising:
forming a dielectric layer over a semiconductor substrate; forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion; forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer; and forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer, wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer, and the first barrier layer separates the dielectric layer from a sidewall of the second barrier layer closest to the dielectric layer; wherein, the first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer.