| 发明名称 | Method of manufacture of an optoelectronic device and an optoelectronic device manufactured using the method | ||
| 摘要 | A method of manufacture of an optoelectronic device includes the steps of: providing or forming a body of crystalline silicon containing substitutional carbon atoms, and irradiating said body of crystalline silicon with protons (H+) to create radiative defect centers in a photoactive region of the device, wherein at least some of said defect centers are G-center complexes having the form Cs—SiI—Cs, where Cs is a substitutional carbon atom and S¾ is an interstitial silicon atom. An optoelectronic device (FIG. 3) manufactured using the method is described. | ||
| 申请公布号 | US8975169(B2) | 申请公布日期 | 2015.03.10 |
| 申请号 | US201214238558 | 申请日期 | 2012.08.09 |
| 申请人 | The University of Surrey | 发明人 | Homewood Kevin Peter;Gwilliam Russell Mark |
| 分类号 | H01L21/425;H01L21/265;H01L33/00;H01L29/36;H01L33/02;H01S5/30;H01L33/34 | 主分类号 | H01L21/425 |
| 代理机构 | Stites & Harbison PLLC | 代理人 | Trenkle Nicholas B.;Stites & Harbison PLLC |
| 主权项 | 1. A method of manufacture of an optoelectronic device including the steps of: providing or forming a body of crystalline silicon containing substitutional carbon atoms, and irradiating said body of crystalline silicon with protons (H+) to create radiative defect centres in a photoactive region of the device, wherein at least some of said defect centres are G-centre complexes having the form Cs—SiI—C s, where Cs is a substitutional carbon atom and SiI is an interstitial silicon atom. | ||
| 地址 | Surrey GB | ||