| 发明名称 | Semiconductor memory device and method of manufacturing the same | ||
| 摘要 | According to one embodiment, a semiconductor memory device includes an electrical terminal disposed in a first side; a first surface including a first part, a second part, and a third part, a mark of the semiconductor memory device being printed in the first part, the second part being disposed in a second side, the second side being opposite side of the first side, the third part being disposed around the first part, a first surface roughness of the first part being higher than a second surface roughness of the third part. | ||
| 申请公布号 | US8975763(B2) | 申请公布日期 | 2015.03.10 |
| 申请号 | US201414278121 | 申请日期 | 2014.05.15 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Sugimura Misa;Yokoyama Toshiro |
| 分类号 | H01L23/544;H01L23/12;G06F1/16 | 主分类号 | H01L23/544 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor memory device comprising: an electrical terminal disposed in a first side; a first surface including a first part, a second part, and a third part, a mark of the semiconductor memory device being printed in the first part, the second part being disposed in a second side, the second side being opposite side of the first side, the third part being disposed around the first part, a first surface roughness of the first part being higher than a second surface roughness of the third part. | ||
| 地址 | Minato-ku JP | ||