| 摘要 |
The present invention relates to an ingot growing apparatus, which uses seed crystal and grows ingot from a silicon solution stored in a crucible, the apparatus comprising a chamber which provides a space in which a series of process for growing ingot are made; a crucible which is installed in the chamber and stores the silicon solution; a heater part for heating the crucible; a lifting tool which enables the seed crystal to be soaked in the silicon solution and raises the same, thereby growing the ingot; and an upper side heat shielding body which is installed on the upper side of the crucible as an insulation tool and has holes through which growing ingot passes, wherein the upper side heat shielding body has a hole size controlling part to control the holes on the upper side heat shielding body and an actuator which controls the hole size controlling part. In the ingot growing apparatus of the present invention, the hole size controlling part is built in the upper side heat shielding body and accordingly minimizes heat impact generated when the seed crystal is soaked in the solution, thereby growing the diameter of an necking part and producing a single crystal ingot whose diameter is large by using the necking part with the large diameter. |
