| 摘要 |
Disclosed in the present invention are a system and a method for fabricating a semiconductor device structure. The semiconductor device structure of an embodiment comprises a first device layer, a second device layer, and an interlayer connection structure. The first device layer is formed on a substrate, and includes a first semiconductor device including a first electrode structure. The second device layer is formed on the first device layer, and includes a second semiconductor device including a second electrode structure. The interlayer connection structure includes at least one first conductive material, and is configured to electrically connect with the first electrode structure and the second electrode structure. |
