| 摘要 |
<p>The present invention relates to an apparatus for heating nitrogen supplied to prevent the powder of a vacuum pump which is included to vacuumize a processing chamber. The present invention provides a heating apparatus of the vacuum pump for a semiconductor manufacturing facility, capable of improving the degree of freedom in a layout design and the efficiency of facility operation and efficiently preventing the adherence phenomenon of chemical materials generated around a rotating rotor of the vacuum pump by installing a pipe in an exhaust line extended from the vacuum pump, heating N2 or Ar gas using heat energy in the exhaust line, and implementing a new type N2 or Ar gas heating method to supply the heated N2 or Ar gas to the vacuum pump. Also, provided is the heating apparatus of the vacuum pump capable of suppressing the generation of powder generated in the exhaust line (a connection section between the vacuum pump and a scrubber) after the vacuum pump.</p> |
