| 摘要 |
1292302 Measuring magnetic fields SONY CORP 5 Nov 1969 [5 Nov 1968] 54267/69 Heading G1N [Also in Division H1] A magnetic field detector comprises a high resistivity, preferably intrinsic, semi-conductor body with two contact regions of one conductivity type, one for injecting and the other for collecting carriers and a third contact region of opposite type or an ohmic contact, the arrangement being such that an input applied between the injecting and third contacts produces a magnetically variable output at the other contact. The collector contact region and third contact are both spaced more than a carrier diffusion length from the injector contact region, and the spacing of the collector region from the injector is less than twice that of the third contact from the injector. Typically the body is of intrinsic germanium which has been etched in CP4. Two regions 4, 5 Fig. 1, are formed by alloying dots of indium-tin to one edge and an N region 7 by alloying antimonytin to the opposite edge. Alternatively all three regions are formed in one main face of the wafer. After etching in hydrogen peroxide electrodes are soldered on. The effect on performance of varying the dimensions of the wafer and spacing of the electrodes 4 is discussed. In operation a plasma generated between electrodes 4 and 7 is diverted towards output regions 5 by a field H+ and away from it by a field H-. If the conductivity types of the regions are interchanged a bias E of opposite polarity is required. |
