SEMICONDUCTOR LASER STRUCTURE

摘要

A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

主权项

1. A semiconductor laser structure, comprising:
a central thermal shunt, located on a SOI substrate having a buried oxide layer surrounding the central thermal shunt, a ring shaped silicon waveguide located on the buried oxide layer and surrounding the central thermal shunt, wherein the ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between; a contiguous thermal shunt covering a portion of the buried oxide layer and surrounding the ring shaped silicon waveguide; an adhesive layer covering the ring shaped silicon waveguide and the buried oxide layer; and a laser element covering the central thermal shunt, the adhesive layer and the contiguous thermal shunt.