| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problems that the number of oxide semiconductor layers is increased by a parallel connection of a first transistor and a second transistor, and parasitic capacitance influences operation of a transistor.SOLUTION: An oxide semiconductor layer has a first channel formation region and a second channel formation region. A source electrode and a drain electrode are located above the oxide semiconductor layer. An insulating layer is located above the source electrode and the drain electrode. A gate electrode is located above the insulating layer. The gate electrode has an opening. The opening is overlapped with the source electrode or the drain electrode.</p> |
