发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.
申请公布号 US2015060406(A1) 申请公布日期 2015.03.05
申请号 US201414475015 申请日期 2014.09.02
申请人 DAINIPPON SCREEN MFG. CO., LTD. 发明人 NEGORO Sei;MURAMOTO Ryo;NAGAI Yasuhiko;OSUKA Tsutomu;IWATA Keiji
分类号 B05D3/10;B05D1/36;B05C11/10 主分类号 B05D3/10
代理机构 代理人
主权项 1. A substrate processing method comprising: a chemical liquid supplying step of supplying a chemical liquid having a first temperature to a major surface of a substrate; a rinse liquid supplying step of supplying, after the chemical liquid supplying step, a rinse liquid having a second temperature lower than the first temperature to the major surface of the substrate to rinse off a liquid remaining on the substrate; a reaction liquid supplying step of supplying, after the chemical liquid supplying step and before the rinse liquid supplying step, a reaction liquid, causing an exothermic reaction upon mixing with the chemical liquid and having a liquid temperature lower than the first temperature and not less than the second temperature, to the major surface of the substrate in a state where the chemical liquid supplied to the substrate in the chemical liquid supplying step remains on the substrate; and a temperature decrease suppressing step of supplying, in parallel to the reaction liquid supplying step, a heating fluid having a temperature lower than the first temperature and higher than the liquid temperature of the reaction liquid to the other major surface of the substrate at an opposite side of the major surface of the substrate to which the chemical liquid is supplied in the chemical liquid supplying step.
地址 Kyoto JP