Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask

摘要

A Cu-containing material is provided as an absorber layer of an EUV mask. With the absorber layer of the Cu-containing material, the same lithography performance of a conventional absorber in 70 nm thickness of TaBN can be achieved by only a 30-nm thickness of the absorber layer according to the various embodiments of the present disclosure. Furthermore, the out-off-band (OOB) flare of the radiation light in 193-257 nm can be reduced so as to achieve the better lithography performance.

主权项

1. An extreme ultraviolet (EUV) mask, comprising:
a substrate; a reflective multilayer (ML) coating over the substrate; and an absorber layer over the reflective ML coating, wherein the absorber layer is made of a material selected from the group consisting of Cu, Ag—Pd—Cu (APC) alloy, Indium Tin Oxide (ITO), and a combination thereof.