发明名称 COOLING PLATE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 <p>A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.</p>
申请公布号 KR101499409(B1) 申请公布日期 2015.03.05
申请号 KR20147030457 申请日期 2014.03.05
申请人 发明人
分类号 C04B35/565;H01L21/683 主分类号 C04B35/565
代理机构 代理人
主权项
地址