| 发明名称 |
EMBEDDED SELECTOR-LESS ONE-TIME PROGRAMMABLE NON-VOLATILE MEMORY |
| 摘要 |
An OTP anti-fuse memory array without additional selectors and a manufacturing method are provided. Embodiments include forming wells of a first polarity in a substrate, forming a bitline of the first polarity in each well, and forming plural metal gates across each bitline, wherein no source/drain regions are formed between the metal gates. |
| 申请公布号 |
US2015062996(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314017417 |
申请日期 |
2013.09.04 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
LIU Yanxiang;CHI Min-hwa;MITTAL Anurag |
| 分类号 |
H01L27/112;G11C17/12;H01L21/762;G11C17/16;H01L21/28 |
主分类号 |
H01L27/112 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming wells of a first polarity in a substrate; forming a bitline in each well, the bitline being of the first polarity; and forming plural metal gates across each bitline, wherein no source/drain regions are formed between the metal gates. |
| 地址 |
Grand Cayman KY US |
