SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a microscopic mesa structure.SOLUTION: A semiconductor device manufacturing method of the present embodiment comprises the steps of: forming a first mask layer 24 on a compound semiconductor layer 21; etching the compound semiconductor layer 21 exposed from the first mask layer 24 to form a semiconductor mesa 50 (island-like region) having lateral faces which extend in a first direction and other lateral faces which extend in a second direction crossing the former lateral faces; exposing the other lateral faces which extend in the second direction to form a second mask layer 28 which covers the lateral faces which extend in the first direction; and wet etching the semiconductor mesa 50 exposed from the second mask layer 28 to form an emitter mesa 54 (mesa structure).