发明名称 CURRENT COLLECTOR, ELECTRODE STRUCTURE, NONAQUEOUS ELECTROLYTE BATTERY, AND ELECTRICITY STORAGE COMPONENT
摘要 A current collector, an electrode structure, a non-aqueous electrolyte battery, and an electrical storage device capable of achieving superior shut down function, are provided. According to the present invention, a current collector 1 having a resin layer 5 on at least one side of a conductive substrate 3, the resin layer 5 including a fluorine-based resin and conductive particles 11, and having a thickness of 0.3 to 20 μm, the current collector satisfying at least one of the following characteristics of (1) to (3): (1) average particle diameter of the conductive particles is 0.5 to 25 μm, and a surface occupying ratio of the conductive particles at the surface of the resin layer is 10 to 50%, (2) resistance of the surface of the resin layer at 20° C. is 1.0 to 10Ω, and resistance after heating at 220° C. is 200 to 600Ω, and (3) resistance of the surface of the resin layer at 20° C. is 1.8 to 9.7Ω, and resistance after heating at 180° C. is 209 to 532Ω, is provided.
申请公布号 US2015064569(A1) 申请公布日期 2015.03.05
申请号 US201314389719 申请日期 2013.04.02
申请人 UACJ Corporation ;UACJ Foil Corporation 发明人 Kato Osamu;Saito Sohei;Honkawa Yukiou;Wasamoto Mitsuyuki;Kataoka Tsugio;Yamabe Satoshi
分类号 H01M4/66;H01M10/05 主分类号 H01M4/66
代理机构 代理人
主权项 1. A current collector having a resin layer on at least one side of a conductive substrate, wherein: the resin layer comprises a fluorine-based resin and conductive particles; the resin layer has a thickness of 0.3 to 20 μm; and the current collector satisfies at least one of the following characteristics of the items (1) to (3): (1) average particle diameter of the conductive particles is 0.5 to 25 μm, and a surface occupying ratio of the conductive particles at a surface of the resin layer is 10 to 50%, (2) resistance of the surface of the resin layer at 20° C. is 1.0 to 10Ω, and resistance after heating at 220° C. is 200 to 600Ω, and (3) resistance of the surface of the resin layer at 20° C. is 1.8 to 9.7Ω, and resistance after heating at 180° C. is 209 to 532Ω.
地址 Chiyoda-ku, Tokyo JP