ARTIFICIAL CRYSTAL GROWTH METHOD

摘要

Provided is a growth method for a large artificial crystal such that occurrence of axis misalignment is rare. The artificial crystal growth method comprises applying pressure to at least two crystal substrates, approximately solid-rectangular in shape and whereof the crystallographic axis directions are aligned, to abut the substrates in the X-axis direction, and, in the pressed state, causing the at least two crystal substrates to grow an artificial crystal.