COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES

摘要

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

主权项

1. A method of forming a monolithic, homogeneous, and porous silicon carbide field emitter having a plurality of discrete emission projections extending from a face of the field emitter, the method comprising:
providing a silicon carbide substrate; providing an anodizing solution including (i) at least one reducing agent, (ii) at least one oxidizer, and (iii) water; electrochemically etching either face of the silicon carbide substrate with the anodizing solution for an effective period of time to thereby form a porous silicon carbide substrate; subjecting the face of the porous silicon carbide substrate to ion etching to thereby form a silicon carbide field emitter having a plurality of discrete emission projections of porous silicon carbide extending from the face of the field emitter.