DYNAMIC STATIC RANDOM ACCESS MEMORY (SRAM) ARRAY CHARACTERIZATION

摘要

A sensor circuit is used to provide bit-cell read strength distribution of an SRAM array. A current-mirror circuit mirroring the bit-line current of an SRAM array is used to power the sensor circuit. A reference current representing nominal bit-cell read current is used as a reference. The current-mirror circuit senses the bit-line current. The current-mirror and the ring oscillator are not part of the bit-line read path.

主权项

1. A circuit comprising:
a static random access memory (SRAM) array including a bit-line; a current mirror to create a mirrored bit-line current, based on a bit-line read current in an active bit-cell of the SRAM array; and a sensor circuit powered by the mirrored bit-line current, an output of the sensor circuit characterizing the SRAM array.