| 摘要 |
A TFT substrate (1) has: a substrate (2); a gate electrode (3) that is formed on the substrate (2); an oxide semiconductor layer (5) that is formed on the substrate (2); a gate insulating film (4) that is formed between the gate electrode (3) and the oxide semiconductor layer (5); a source electrode (7S) and a drain electrode (7D), which are connected to the oxide semiconductor layer (5); oxide films (8s, 8d), which are formed on the surfaces of the source electrode (7S) and the drain electrode (7D), respectively; a first protection film (9) that covers the oxide films (8s, 8d); and a first wiring layer (10L), which is connected to the source electrode (7S) and the drain electrode (7D) via a first contact hole (CH1) that is provided to penetrate the first protection film (9) and the oxide films (8s, 8d). The source electrode (7S) and the drain electrode (7D) are laminated films, each of which includes a Cu film and a CuMn alloy film formed on the Cu film. |
