发明名称 METHOD OF TESTING NON-VOLATILE MEMORY DEVICE AND METHOD OF MANAGING NON-VOLATILE MEMORY DEVICE
摘要 A method of testing a non-volatile memory device and a method of managing the non-volatile memory device are provided. The method of testing the non-volatile memory device includes calculating first and second values based on program loop frequencies corresponding to word lines of a memory area. A characteristic value of the memory area may be calculated based on the first and second values, and may be compared to a reference value to determine whether the memory area is defective.
申请公布号 US2015063030(A1) 申请公布日期 2015.03.05
申请号 US201414468736 申请日期 2014.08.26
申请人 PARK Sang-In;KIM Boh-Chang;NAM Bu-il;KANG Dong-Ku 发明人 PARK Sang-In;KIM Boh-Chang;NAM Bu-il;KANG Dong-Ku
分类号 G11C29/04;G11C29/00;G11C16/04;G11C16/06 主分类号 G11C29/04
代理机构 代理人
主权项 1. A method of testing a non-volatile memory device, the non-volatile memory device including a memory area, the memory area including memory cells that are connected to a plurality of word lines, the method comprising: selecting, by the non-volatile memory device, one of a plurality of program loop frequencies as a first value, the plurality of program loop frequencies corresponding to the plurality of word lines; determining, by the non-volatile memory device, a second value based on a number N of the plurality of program loop frequencies, where the number N is a natural number that is equal to or greater than two; determining, by the non-volatile memory device, a characteristic value of the memory area based on the first and second values; and determining, by the non-volatile memory device, whether the memory area is defective based on a reference value and the characteristic value.
地址 Anyang-si KR