发明名称 CONDUCTIVE LINE STRUCTURES AND METHODS OF FORMING THE SAME
摘要 Conductive line structures, and methods of forming the same, include first and second pattern structures, insulation layer patterns and an insulating interlayer. The first pattern structure includes a conductive line pattern and a hard mask stacked, and extends in a first direction. The second pattern structure includes a second conductive line pattern and another hard mask stacked, and at least a portion of the pattern structure extends in the first direction. The insulation layer patterns contact end portions of the pattern structures. The first pattern structure and an insulation layer pattern form a closed curve shape in plan view, and the second pattern structure and another insulation layer pattern form another closed curve shape in plan view. The insulating interlayer covers upper portions of the pattern structures and the insulation layer patterns, an air gap between the pattern structures, and another air gap between the insulation layer patterns.
申请公布号 US2015061132(A1) 申请公布日期 2015.03.05
申请号 US201414532484 申请日期 2014.11.04
申请人 Samsung Electronics Co., Ltd. 发明人 LEE Sok-Won;LEE Joon-Hee;CHOI Jung-Dal;JO Seong-Min
分类号 H01L23/482;H01L21/768 主分类号 H01L23/482
代理机构 代理人
主权项 1. A conductive line structure, comprising: a first pattern structure including a first conductive line pattern and a first hard mask sequentially stacked, the first pattern structure extending in a first direction; a second pattern structure including a second conductive line pattern and a second hard mask sequentially stacked, at least a portion of the second pattern structure extending in the first direction; insulation layer patterns contacting end portions of the first and second pattern structures, the first pattern structure and a first insulation layer pattern of the insulation layer patterns forming a first closed curve shape in plan view, and the second pattern structure and a second insulation layer pattern of the insulation layer patterns forming a second closed curve shape in plan view; and an insulating interlayer covering upper portions of the first and second pattern structures and the insulation layer patterns, a first air gap between the first and second pattern structures, and a second air gap between the insulation layer patterns.
地址 Suwon-Si KR