发明名称 |
TUNGSTEN SINTERED BODY SPUTTERING TARGET AND TUNGSTEN FILM FORMED USING SAID TARGET |
摘要 |
A tungsten sintered compact sputtering target, wherein a molybdenum strength detected with a secondary ion mass spectrometer (D-SIMS) is equal to or less than 1/10000 of the tungsten strength. This invention aims to reduce the specific resistance of a tungsten film sputtered using the tungsten sintered compact target by reducing the molybdenum in the tungsten sintered compact sputtering target and adjusting the grain size distribution of the W powder that is used during sintering. |
申请公布号 |
KR20150023674(A) |
申请公布日期 |
2015.03.05 |
申请号 |
KR20157000390 |
申请日期 |
2013.10.24 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
KAMINAGA KENGO;OHASHI KAZUMASA |
分类号 |
C23C14/34;B22F3/14;C22C1/04;C23C14/14 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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