发明名称 TUNGSTEN SINTERED BODY SPUTTERING TARGET AND TUNGSTEN FILM FORMED USING SAID TARGET
摘要 A tungsten sintered compact sputtering target, wherein a molybdenum strength detected with a secondary ion mass spectrometer (D-SIMS) is equal to or less than 1/10000 of the tungsten strength. This invention aims to reduce the specific resistance of a tungsten film sputtered using the tungsten sintered compact target by reducing the molybdenum in the tungsten sintered compact sputtering target and adjusting the grain size distribution of the W powder that is used during sintering.
申请公布号 KR20150023674(A) 申请公布日期 2015.03.05
申请号 KR20157000390 申请日期 2013.10.24
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 KAMINAGA KENGO;OHASHI KAZUMASA
分类号 C23C14/34;B22F3/14;C22C1/04;C23C14/14 主分类号 C23C14/34
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