发明名称 COMPOSITIONS CONTAINING BLOCK COPOLYMERS AND PROCESSES FOR PHOTOLITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide new photoresist compositions that are useful for immersion lithography.SOLUTION: Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting a resist layer during immersion lithography processing.
申请公布号 JP2015043110(A) 申请公布日期 2015.03.05
申请号 JP20140243382 申请日期 2014.12.01
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 WANG DEYAN;SZMANDA CHARLES R;BARCLAY GEORGE G;XU CHENG-BAI
分类号 G03F7/039;C08F297/00;H01L21/027 主分类号 G03F7/039
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