| 摘要 |
In a method for manufacturing an ion-sensitive structure for an ion-sensitive sensor, first a semiconductor substrate bearing an oxide layer is provided, whereupon a metal oxide layer and a metal layer are deposited and tempered, in order to obtain a layer sequence having a crystallized metal oxide layer and an oxidized and crystallized metal layer on the semiconductor substrate bearing the oxide layer. In such case, the metal oxide layer and the metal layer have a compatible metal element, and the coating thickness dMOX of the metal oxide layer is greater than the coating thickness dMET of the metal layer. |
