| 摘要 |
The present technique relates to a solid-state image-capturing device enabling appropriate generation of fine pixel signals, a method for manufacturing said device, and an electronic device. The solid-state image-capturing device is provided with a charge storage unit, a charge retention unit, and a transfer transistor. The charge storage unit is formed on a first semiconductor substrate, and stores photoelectrically converted charges. The charge retention unit is formed on a second semiconductor substrate, and retains the charges stored in the charge storage unit. The transfer transistor transfers the charges stored in the charge storage unit to the charge retention unit. The interface where the first semiconductor substrate and the second semiconductor substrate are joined is formed in a channel of the transfer transistor. |
