发明名称 Apparatus for making semiconductor
摘要 <p>PURPOSE: An apparatus for making semiconductor is provided to remove a by-product attached a protective layer through a dry cleaning method by reducing a contact area through the improvement of a surface luminance. CONSTITUTION: A process gas is supplied to a reaction chamber(14). A vent(29) discharges a process gas of the reaction chamber. A gas discharge path(31) has a thermal spray coating on which is coated with a corrosion resistance oxide film by communicating the reaction chamber and the vent. A polished layer is arranged on a part of the thermal spray coating.</p>
申请公布号 KR101497897(B1) 申请公布日期 2015.03.05
申请号 KR20080118903 申请日期 2008.11.27
申请人 发明人
分类号 H01L21/02;H01L21/3065 主分类号 H01L21/02
代理机构 代理人
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