SEMICONDUCTOR PACKAGES AND METHODS OF PACKAGING SEMICONDUCTOR DEVICES

摘要

A method of forming semiconductor assemblies is disclosed. The method includes providing an interposer with through interposer vias. The interposer includes first and second surfaces. The through interposer vias extend from the first surface to the second surface of the interposer. The interposer with the through interposer vias enable attachment and electrical coupling of a die having very fine contact pitch to an external device having relatively larger contact pitch. At least a first die is mounted on at least one die attach region on the first surface of the interposer. The first die comprises a first surface with first conductive contacts thereon. The interposer comprises material with CTE similar to that of the first die. The first conductive contacts of the first die are coupled to the through interposer vias on the first surface of the interposer. A bonding process which does not require a reflow process is performed to form connections between the first die and interposer.

主权项

1. A method of forming semiconductor assemblies comprising:
providing an interposer with through interposer vias, the interposer comprises a first surface and a second surface, wherein
the through interposer vias extend from the first surface to the second surface of the interposer,the first and second surfaces of the interposer comprise interposer contact pads thereon, the through interposer vias facilitate electrical coupling between the interposer contact pads on the first and second surfaces of the interposer, andthe second surface of the interposer comprises interposer contacts disposed thereon, the interposer contacts are configured to facilitate electrical coupling between the interposer contact pads and an external device; mounting at least a first die on at least one die attach region on the first surface of the interposer, the first die comprises a first surface with first conductive contacts thereon, wherein the interposer comprises material with coefficient of thermal expansion (CTE) similar to that of the first die, the first conductive contacts of the first die are coupled to the through interposer vias on the first surface of the interposer; and performing a bonding process which does not require a reflow process to form connections between the first die and interposer.