| 摘要 |
The present invention is a metal nitride material used for a thermistor, comprising a metal nitride represented by the general formula: Mx(Al1-vSiv)y(N1-wOw)z (wherein M represents at least one of Ti, V, Cr, Mn, Fe, and Co; 0.0 < v < 0.3; 0.70 ≤ y/(x+y) ≤ 0.98; 0.45 ≤ z ≤ 0.55; 0 < w ≤ 0.35; and x + y + z = 1), such that the crystal structure of the same is a single phase of hexagonal wurtzite-type. A manufacturing method for this metal nitride material for a thermistor comprises a deposition step which forms a film by performing reactive sputtering within a nitrogen- and oxygen-containing atmosphere using a M-Al-Si alloy sputtering target (wherein M represents at least one of Ti, V, Cr, Mn, Fe, and Co). |
