MAGNETIC RESISTANCE ELEMENT AND MAGNETIC SENSOR USING SAME

摘要

Provided is a structure that can suppress diffusion of B in a magnetic resistance element that has a layer that includes an alloy that contains B. In addition to including an alloy that contains B, the magnetic resistance element has: electrical resistance changing layers (5a, 5c, 5d) wherein electrical resistance is changed by means of a magnetic field; and capturing layers (6a, 6b, 13, 14) for capturing the B that the electrical resistance changing layers diffuse. As a result of this configuration, the B that is included in the electrical resistance changing layers becomes easy to capture inside the capturing layers and diffusion of the B to the exterior of the magnetic resistance element becomes difficult. Thereby, the problems that occur when the B diffuses to the exterior of the magnetic resistance element occur less easily.