发明名称 REPAIRING APPARATUS
摘要 The present invention related to an apparatus which can stably and efficiently perform repair modification a long time on fine parts of a mask and the likes with less damage on a sample. The apparatus (10) comprises at least: a gas field ionization ion source including a sharpened tip; a cooling means cooling the tip; an ion beam body tube (11) concentrating ion of gas generated in the gas field ionization ion source to form a focused ion beam; a movable sample stage (15) in which a sample is irradiated with the focused ion beam formed from the ion beam body tube (11); a sample chamber (13) in which the sample stage (15) is embedded; and a control part (20) repairing a sample mask (14) or a mold of a nano imprint lithography by the concentrated ion beam. The gas field ionization ion source has nitrogen as the ion, and includes a tip consisting of an iridium single crystal having a single peak which generates ion.
申请公布号 KR20150022697(A) 申请公布日期 2015.03.04
申请号 KR20140108335 申请日期 2014.08.20
申请人 HITACHI HIGH-TECH SCIENCE CORPORATION 发明人 ARAMAKI FUMIO;YASAKA ANTO;MATSUDA OSAMU;SUGIYAMA YASUHIKO;OBA HIROSHI;KOZAKAI TOMOKAZU;AITA KAZUO
分类号 G03F1/72;H01L21/027 主分类号 G03F1/72
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