| 发明名称 |
METHOD FOR FORMING SIOCH FILM USING ORGANOAMINOSILANE ANNEALING |
| 摘要 |
<p>The present invention relates to a method for forming a low dielectric SiOCH film modified on a substrate which comprises the steps of: providing a low dielectric SiOCH film formed on a substrate by fluidity of CVD; increasing Si-O bonds and/or Si-C bonds on a SiOCH film by exposing the low dielectric SiOCH film to gas containing Si-N bonds within a molecule as electromagnetic energy is not applied; and hardening the low dielectric SiOCH film.</p> |
| 申请公布号 |
KR20150022677(A) |
申请公布日期 |
2015.03.04 |
| 申请号 |
KR20140105478 |
申请日期 |
2014.08.13 |
| 申请人 |
ASM IP HOLDING B.V. |
发明人 |
ISHIKAWA DAI;MATSUSHITA KIYOHIRO;NAKANO AKINORI;UEDA SHINTARO;ARAI HIROFUMI |
| 分类号 |
H01L21/312;H01L21/205 |
主分类号 |
H01L21/312 |
| 代理机构 |
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