| 摘要 |
1,230,620. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MFGS. Ltd. 26 July, 1968, No. 35871/68. Heading H1K. A semi-conductor element 24 is mounted on one surface of an insulating carrier 30 which has mutually insulated electrically conductive films 31, 32, at least on its opposite end faces, these faces being substantially perpendicular to the said one surface of the carrier. The carrier with the element may be sealed in a housing, Fig. 3, not shown, which comprises an insulating member secured between and mutually insulating two electrically conductive portions of the housing which form the terminals of the device, respective connections being made between the end wall films 31 and 32 and the two electrically conductive portions which may be at either end or both at one end of the envelope. Alternatively the carrier may be mounted to make contact with a hybrid integrated circuit by the upstanding parts 37 and 38 of the film. In all arrangements the groove 35 may be filled with a synthetic resin to encapsulate the element 24. The two sections 41, 42 of the conductive films are separated from one another by means of groove 36 or a step (60), Fig. 6, not shown, and in either case the semi-conductor element 24 is mounted directly on one section 42 and contact with the other section 41 made by means of a wire 27. Both wire and conducting layer are of gold, and the carrier is of aluminium oxide. The semi-conductor device may be a PN junction diode, a Schottky diode, a Gunn effect device, a tunnel diode or a varactor diode. |
