发明名称 |
Semiconductor device with a low-k spacer and method of forming the same |
摘要 |
<p>A device includes a semiconductor substrate. A gate stack on the semiconductor substrate includes a gate dielectric layer and a gate conductor layer. Low-k spacers are adjacent to the gate dielectric layer. Raised source/drain (RSD) regions are adjacent to the low-k spacers. The low-k spacers are embedded in an ILD on the RSD regions.</p> |
申请公布号 |
GB2512008(B) |
申请公布日期 |
2015.03.04 |
申请号 |
GB20140012524 |
申请日期 |
2013.01.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KANGGUO CHENG;BRUCE B DORIS;ALI KHAKIFIROOZ;DOUGLAS C LA TULIPE JR |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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