| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress a collector leak current that occurs on the surface of a collector mesa so as to improve minute HBT collector breakdown voltage characteristics. <P>SOLUTION: A second sub-collector layer 103 is formed on an area that is smaller than that of a first sub-collector layer 102 in planar view. A collector layer 104 is formed on an area that is larger in planar view than a semiconductor layer 132, which constitutes the second sub-collector layer 103. A base layer 105 is formed on an area that is smaller than that of the collector layer 104 in planar view. An emitter layer 106 is formed on an area that is smaller than that of the base layer 105 in planar view. The semiconductor layer 132, which constitutes the second sub-collector layer 103, and the base layer 105 are formed on an area inside the collector layer 104 in planar view. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
