发明名称 |
Backside structure and methods for BSI image sensors |
摘要 |
BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer. |
申请公布号 |
US8969991(B2) |
申请公布日期 |
2015.03.03 |
申请号 |
US201414178084 |
申请日期 |
2014.02.11 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chuang Chun-Chieh;Yaung Dun-Nian;Liu Jen-Cheng;Wang Wen-De;Chou Keng-Yu;Tsai Shuang-Ji;Kao Min-Feng |
分类号 |
H01L21/00;H01L27/146;H01L31/0216;H01L31/18 |
主分类号 |
H01L21/00 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A BSI image sensor, comprising:
a substrate having a sensor array region and a periphery region, the substrate having a front side surface and a back side surface; a plurality of metallization layers overlying the front side surface of the substrate; a BARC layer over the back side surface of the substrate, the BARC layer having a first thickness over the sensor array region and a second thickness over the periphery region, the second thickness being greater than the first thickness; a first dielectric layer over the first thickness of the BARC layer over the sensor array region and over the second thickness of the BARC layer over the periphery region; and a passivation layer over the first dielectric layer. |
地址 |
Hsin-Chu TW |