Flip-chip light emitting diode

摘要

A flip-chip light emitting diode comprises a transparent base-plate, at least a first electrical semi-conductive layer, a light emitting layer, a second electrical semi-conductive layer, at least a first ohmic contact, a second ohmic contact and a third ohmic contact are installed above the transparent base-plate. The at least first ohmic contact is electrically connected to the third ohmic contact through a connection passage. A first electrode area is formed above the second electrical semi-conductive layer. The second ohmic contact is disposed above the transparent base-plate and adjacent to a side of the first ohmic contact. A second electrode area is formed on the second ohmic contact.

主权项

1. A flip-chip light emitting diode, comprising:
a transparent base-plate; a first electrical semi-conductive layer formed on the transparent base-plate, a first surface and a second surface being adjacently disposed on the first electrical semi-conductive layer; a light emitting layer formed on the first surface of the first electrical semi-conductive layer; a second electrical semi-conductive layer formed on the light emitting layer, a first electrode area being formed above the second electrical semi-conductive layer; and at least a first ohmic contact formed between the first electrical semi-conductive layer and the transparent base-plate below the first surface and the second surface, at least a third ohmic contact being further disposed within the first electrical semi-conductive layer, at least a connection passage being disposed between the first ohmic contact and the third ohmic contact to electrically connect the first ohmic contact to the third ohmic contact, a second electrode area being formed above the second surface; wherein the third ohmic contact on the first surface is covered by an insulation layer in order that the third ohmic contact is separated from the second electrical semi-conductive layer.