Method of manufacturing metal silicide and semiconductor structure using the same

摘要

A method of manufacturing a metal silicide is disclosed below. A substrate having a first region and a second region is provided. A silicon layer is formed on the substrate. A planarization process is performed to make the silicon layer having a planar surface. A part of the silicon layer is removed to form a plurality of first gates on the first region and to form a plurality of second gates on the second region. The height of the first gates is greater than the height of the second gates, and top surfaces of the first gates and the second gates have the same height level. A dielectric layer covering the first gates and the second gates is formed and exposes the top surfaces of the first gates and the second gates. A metal silicide is formed on the top surfaces of the first gates and the second gates.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a substrate, wherein the substrate has a first region and a second region; forming a silicon layer on the substrate; performing a planarization process to make the silicon layer having a planar surface; removing a part of the silicon layer to form a plurality of first gates on the first region and to form a plurality of second gates on the second region, wherein the height of the first gates is greater than that of the second gates, and top surfaces of the first gates and the second gates have the same height level; forming a dielectric layer on the substrate, wherein the dielectric layer is fully filled between one of the first gates and one of the second gates and exposes the top surfaces of the first gates and the second gates; and forming a metal silicide on the top surfaces of the first gates and the second gates.