Self-aligned contacts

摘要

A method of forming a gate structure with a self-aligned contact is provided and includes sequentially depositing a sacrificial layer and a secondary layer onto poly-Si disposed at a location of the gate structure, encapsulating the sacrificial layer, the secondary layer and the poly-Si, removing the sacrificial layer through openings formed in the secondary layer and forming silicide within at least the space formally occupied by the sacrificial layer.

主权项

1. A method of forming a gate structure with a self-aligned contact, the method comprising:
encapsulating a location of the gate structure of a channel extending between source and drain regions with lateral spacers and a secondary layer disposed such that an entirety of the secondary layer is between the lateral spacers such that the encapsulated location is defined axially between the lateral spacers and radially between a radially outermost surface of the channel and a radially innermost surface of the secondary layer; forming silicide in the encapsulated location; and introducing a conductive material into the encapsulated location through openings formed in the secondary layer.