Method for producing a transistor structure with superimposed nanowires and with a surrounding gate

摘要

The present invention relates to a method for producing a microelectronic device having a channel structure formed from superimposed nanowires, in which a nanowire stack having a constant transverse section is firstly formed, followed by a sacrificial gate and insulating spacers, where source and drain areas are then formed by growth of semiconductor material on areas of the stack which are not protected by the sacrificial gate and the insulating spacers (FIG. 4D).

主权项

1. A method for producing a microelectronic device including a transistor having a semiconductor structure formed of nanowires, wherein the method includes the following steps:
a) producing on a support, a stack or multiple juxtaposed stacks of nanowires, where the stack or stacks has/have a constant transverse section, and is/are formed from nanowires alternating between nanowires of at least one first semiconductor material, and nanowires of at least one second semiconductor material, wherein the producing of the nanowire stack or stacks includes etching, through a hard mask, a stack of layers formed from alternating layers of the first semiconductor material, and of the second semiconductor material, b) forming a sacrificial gate on, and against the side walls of, at least one central area of at least one or more of said stacks of constant transverse section, c) forming insulating areas against side walls of said sacrificial gate, so as to cover areas of said side walls of said stacks, either side of said central area of said stacks, d) forming of semiconductor areas on end areas of at least one of said stacks by growth of at least one semiconductor material, wherein the nanowire stack or stacks is/are covered with said hard mask.