ESD protection structure and semiconductor device comprising the same

摘要

An ESD protection structure and a semiconductor device having an ESD protection structure with the ESD protection structure including a patterned conductive ESD protection layer. The ESD protection layer is patterned to have a first portion of a substantially closed ring shape having an outer contour line and an inner contour line parallel with each other. The outer and the inner contour lines are waved lines. The first portion further has a midline between and parallel with the outer and the inner contour lines. The midline is a waved line having a substantially constant curvature at each point of the midline. Therefore the ESD protection layer has a substantially uniform curvature and an increased perimeter which advantageously improve the breakdown voltage and the current handling capacity of the ESD protection structure.

主权项

1. An ESD protection structure comprising:
a patterned conductive ESD protection layer including a first portion of a substantially closed ring shape, wherein the ring shaped first portion has an outer contour line and an inner contour line parallel with each other, and wherein the outer contour line and the inner contour line are waved lines; and wherein the first portion further has a midline located between the outer contour line and the inner contour line, wherein the midline is a waved line and is substantially parallel with both the outer contour line and the inner contour line, and wherein the midline has a first distance to the outer contour line and a second distance to the inner contour line, and wherein the first distance and the second distance are substantially equal, and wherein the midline has a substantially constant curvature at each point of the midline; and wherein the first portion is doped to include a plurality of first-conductivity-type doped zones and second-conductivity-type doped zones arranged alternately between the outer contour line and the inner contour line in a direction along a normal line of the midline at each point of the midline, wherein the first-conductivity-type is opposite to the second-conductivity-type, and wherein the contour lines of each of the first-conductivity-type doped zones and second-conductivity-type doped zones are substantially parallel with the outer contour line and the inner contour line of the first portion.