发明名称 Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film
摘要 Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.
申请公布号 US8969177(B2) 申请公布日期 2015.03.03
申请号 US201313917568 申请日期 2013.06.13
申请人 Applied Materials, Inc. 发明人 Chowdhury Mohammad Kamruzzaman;Lei Wei-Sheng;Egan Todd;Eaton Brad;Yalamanchili Madhava Rao;Kumar Ajay
分类号 H01L21/00;H01L21/78;B23K26/36;H01L21/67;B23K26/06;B23K26/18;B23K26/40 主分类号 H01L21/00
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising: coupling the semiconductor wafer to a carrier substrate with a double-sided ultraviolet (UV)-curable adhesive film; forming a mask above the semiconductor wafer, the mask covering and protecting the integrated circuits; patterning the mask with a laser scribe process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; and etching the semiconductor wafer through the gaps in the patterned mask to form singulated integrated circuits; curing a first side of the UV-curable adhesive film by exposure to UV light, wherein the UV-curable adhesive film comprises a carrier film disposed between first and second adhesive layers, the first adhesive layer disposed on the first side having a shorter curing time than the second adhesive layer; and detaching the singulated integrated circuits from the cured first side of the UV-curable adhesive film.
地址 Santa Clara CA US