发明名称 |
Sputtering target and method for producing same |
摘要 |
[Problems to be Solved];To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same.;[Means to Solve the Problems];The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing. |
申请公布号 |
US8968491(B2) |
申请公布日期 |
2015.03.03 |
申请号 |
US201113579223 |
申请日期 |
2011.03.08 |
申请人 |
Mitsubishi Materials Corporation |
发明人 |
Zhang Shoubin;Shoji Masahiro;Shirai Yoshinori |
分类号 |
C22C9/00;C23C14/14;C22C1/10;C22C32/00;C23C14/34;C23C14/35;H01L31/032;B22F3/14 |
主分类号 |
C22C9/00 |
代理机构 |
Edwards Wildman Palmer LLP |
代理人 |
Edwards Wildman Palmer LLP ;Hsi Jeffrey D. |
主权项 |
1. A sputtering target, wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. |
地址 |
Tokyo JP |