发明名称 |
PLASMA SURFACE PROCESSOR AND PLASMA SURFACE PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma surface processing technique capable of uniformly reforming the whole surface of a long material and freely coping with plasma treatment in which atmosphere control is required.SOLUTION: A plasma surface processor includes: a chamber 1 in which a dielectric body is formed in a pipe shape; an inner electrode 2 which is formed over the whole circumference of the inner peripheral surface of the chamber 1; an outer electrode 3 which is formed over the whole circumference of the outer peripheral surface of the chamber; a voltage application means 4 for applying a voltage to the inner electrode 2 and the outer electrode 3 to generate plasma by dielectric barrier discharge; and an atmosphere gas introduction means 6 for introducing atmosphere gas into the chamber from openings 5 formed right and left ends of the chamber 1. |
申请公布号 |
JP2015041409(A) |
申请公布日期 |
2015.03.02 |
申请号 |
JP20130170236 |
申请日期 |
2013.08.20 |
申请人 |
SURTEC KARIYA:KK;CHUO SEISAKUSHO LTD;NAGOYA INDUSTRIES PROMOTION CORP |
发明人 |
HARA HIDEKI;OZAKI TAKASHI;KUME MICHIYUKI;TAKASHIMA SEIGO;ASAMI ETSUO;HAYAKAWA MASAHIRO |
分类号 |
H05H1/24;D06B19/00 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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